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IPD50N03S2-07 Datasheet
Datasheet specifications
| Datasheet's name | IPD50N03S2-07 |
|---|---|
| File size | 57.016 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet IPD50N03S2-07 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPD50N03S2-07
- Power Dissipation (Pd): 136W
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 50A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@85uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 7.3mΩ@10V,50A
- Package: TO-252
- Manufacturer: Infineon Technologies
